US Patent Issued to Taiwan Semicoductor Manufacturing on June 3 for "Semiconductor device, FinFET device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,185, issued on June 3, was assigned to Taiwan Semicoductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device, FinFET device and methods of forming the same" was invented by Po-Hsien Cheng (Hsinchu, Taiwan), Jr-Hung Li (Hsinchu County, Taiwan), Tai-Chun Huang (Hsin-Chu, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan), Chung-Ting Ko (Kaohsiung, Taiwan), Jr-Yu Chen (Taipei, Taiwan) and Wan-Chen Hsieh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the...