ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,129, issued on Oct. 21, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Stacked nanosheet device for process and performance optimization" was invented by Xi-Wei Lin (Fremont, Calif.), Victor Moroz (Saratoga, Calif.), Zudian Qin (Cupertino, Calif.) and Plamen Asenov Asenov (Glasgow, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a multitude of GAAFETs on a silicon substrate includes forming alternating layers of Si nanosheets and SiGe alloys above the silicon substrate, depositing a layer of oxide buffer above the top layer of SiGe alloy, depositing a mask layer above the oxide buffer layer, patterning the mask ...