US Patent Issued to Synopsys on May 13 for "Isolating ion implantation of silicon channels for integrated circuit layout" (British, American Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,493, issued on May 13, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Isolating ion implantation of silicon channels for integrated circuit layout" was invented by Salvatore Maria Amoroso (Hamilton, Great Britain), Plamen Asenov (Glasgow, Great Britain) and Victor Moroz (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A configuration to isolate ion implantation of silicon channels for placement of integrated circuit devices within an integrated circuit layout. The configuration layers a photolithographic mask having one or more openings on a silicon substrate. The configuration directs a focused ion beam towards the silicon subs...