ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,585, issued on March 4, was assigned to Synopsys Inc. (Sunnyvale, Calif.).
"Memory write assist" was invented by M Sultan M Siddiqui (Noida, India), Md Amir Arif (New Delhi), Tejaswini Saini (Uttam Nagar, India), Sudhir Kumar (Shastri Nagar, India) and Ravindra Shrivastava (Noida, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "An example described herein is a circuit including a dynamic complementary metal-oxide-semiconductor (CMOS) inverter level translator circuit and a capacitor. The dynamic CMOS inverter level translator circuit is electrically connected to a first power domain and has a first input node configured to receive a first trigg...