US Patent Issued to Synopsys on June 24 for "Reduced circuit area memory device with a half-word memory architecture" (Vermont, California Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,865, issued on June 24, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Reduced circuit area memory device with a half-word memory architecture" was invented by Harold Pilo (Underhill, Vt.) and Niranjan Behera (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory device and control circuitry. The memory array includes bitcells and bitlines connected to the bitcells. The bitcells are grouped into bitcell groups. The control circuitry is connected to the bitcell groups via the bitlines. The control circuitry adjusts connections with the bitcell groups to include a first bitcell group of the bitcell gro...