US Patent Issued to Synopsys on July 8 for "Reducing memory device bitline leakage" (Indian Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,656, issued on July 8, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Reducing memory device bitline leakage" was invented by Shishir Kumar (Greater Noida, India) and Vinay Kumar (Aligarh, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of select lines, a plurality of word lines, an array of memory cells, a bitline, and a resistance device. The array of memory cells includes multiple rows and multiple columns. The bitline is structured to receive a current in a read operation, causing a value stored in a selected memory cell to be readable when a select line and a word line that interest the selected mem...