ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,151, issued on Dec. 30, was assigned to Synopsys Inc. (Sunnyvale, Calif.).
"Memory with hybrid write assist scheme" was invented by Harold Pilo (Underhill, Vt.), Anurag Garg (Cupertino, Calif.) and Michael Lee (South Burlington, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and circuit are provided for maintaining an operating voltage on a selected column with a plurality of bitcells in a memory when writing to the selected column. The method includes during an active write operation to the selected column, implementing an NMOS transistor NC to allow a bitcell-supply self-discharge (BSSD) to occur on the selected column, wherein the BS...