US Patent Issued to Synopsys on Dec. 2 for "Determining a density of through-silicon vias in integrated circuits" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,021, issued on Dec. 2, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Determining a density of through-silicon vias in integrated circuits" was invented by I-Jye Lin (New Taipei, Taiwan) and Gary K. Yeap (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for determining a density of through-silicon vias (TSVs) in a three-dimensional (3D) stacked die are disclosed. In some embodiments, such techniques may include obtaining first power consumption information associated with a first die of the 3D stacked die; obtaining second power consumption information associated with a second die of the 3D stacked die; identifying, on t...