US Patent Issued to SUZHOU ORIENTAL SEMICONDUCTOR on Jan. 13 for "Super junction semiconductor power device" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,044, issued on Jan. 13, was assigned to SUZHOU ORIENTAL SEMICONDUCTOR Co. LTD. (Jiangsu, China).

"Super junction semiconductor power device" was invented by Lei Liu (Jiangsu, China), Wei Liu (Jiangsu, China), Yuanlin Yuan (Jiangsu, China) and Rui Wang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A super junction semiconductor power device includes an n-type drain region, an n-type drift region, multiple p-type columns, and two gate trenches. The n-type drift region is located on the n-type drain region. The multiple p-type columns have the same width. The spacing between two adjacent p-type columns is the same. A first p-type body r...