US Patent Issued to SUZHOU ORIENTAL SEMICONDUCTOR on Dec. 16 for "Super junction semiconductor power device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,667, issued on Dec. 16, was assigned to SUZHOU ORIENTAL SEMICONDUCTOR Co. LTD. (Jiangsu, China).

"Super junction semiconductor power device" was invented by Wei Liu (Jiangsu, China), Lei Liu (Jiangsu, China), Yuanlin Yuan (Jiangsu, China) and Rui Wang (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A super junction semiconductor power device includes an n-type drain region, an n-type drift region, multiple p-type columns, a gate structure, and multiple JFET regions. The width of each of the multiple p-type columns is equal. The spacing between two adjacent p-type columns is equal. The tops of the multiple p-type columns are provided w...