ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,238, issued on Aug. 19, was assigned to SUZHOU ORIENTAL SEMICONDUCTOR Co. LTD. (Jiangsu, China).
"Insulated gate bipolar transistor device" was invented by Wei Liu (Jiangsu, China), Minzhi Lin (Jiangsu, China), Yuanlin Yuan (Jiangsu, China) and Rui Wang (Jiangsu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An IGBT device includes a p-type collector region, an n-type semiconductor layer located above the p-type collector region, a plurality of gate trenches, shielded gates, gates, and a p-type body region located in the n-type semiconductor layer and between adjacent gate trenches. The gate trenches are located in the n-type semiconductor la...