US Patent Issued to SUZHOU NOVOSENSE MICROELECTRONICS on Jan. 13 for "Compensation circuit and compensation method for magnetic field sensing element" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,523,716, issued on Jan. 13, was assigned to SUZHOU NOVOSENSE MICROELECTRONICS Co. LTD. (Sip Suzhou, China).

"Compensation circuit and compensation method for magnetic field sensing element" was invented by Fute Yuan (SIP Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a compensation circuit and compensation method for a magnetic field sensing element. The compensation circuit comprises a magnetic field sensing element, a reference resistor, a current source, and a processing module. The magnetic field sensing element comprises a sensing substrate, a sensing response layer, a sensing electrode, and a sensing doped region. An av...