US Patent Issued to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES on Sept. 2 for "Interconnected electrode structure having multi-conductive through hole and method of manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,475, issued on Sept. 2, was assigned to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES (Suzhou, China).

"Interconnected electrode structure having multi-conductive through hole and method of manufacturing same" was invented by Jian Lin (Suzhou, China), Hao Zhang (Suzhou, China), Jing Wang (Suzhou, China), Zhenguo Wang (Suzhou, China), Qun Luo (Suzhou, China), Chao Gong (Suzhou, China) and Changqi Ma (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnected electrode structure is provided. The interconnected electrode structure includes an insulating base material, a through hole, a first c...