US Patent Issued to Suzhou Everbright Photonics, EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS on Feb. 3 for "High-reliability low-defect semiconductor light-emitting device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,416, issued on Feb. 3, was assigned to Suzhou Everbright Photonics Co. Ltd. (China) and EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS Co. LTD. (China).

"High-reliability low-defect semiconductor light-emitting device and method for manufacturing same" was invented by Jun Wang (Suzhou, China), Shaoyang Tan (Suzhou, China), Lichen Zhang (Suzhou, China), Yiwen Hu (Suzhou, China), Wu Zhao (Suzhou, China), Bo Li (Suzhou, China) and Quanling Li (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-reliability low-defect semiconductor light-emitting device and a method for manufacturing same. The high-reliability low-defect semiconductor li...