US Patent Issued to SUZHOU DABO NEW MATERIAL TECHNOLOGY on Dec. 9 for "Integrated device based on third-generation semiconductor and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,765, issued on Dec. 9, was assigned to SUZHOU DABO NEW MATERIAL TECHNOLOGY Co. LTD. (Suzhou, China).

"Integrated device based on third-generation semiconductor and manufacturing method thereof" was invented by Feng Pan (Suzhou, China), Rongxuan Su (Suzhou, China), Rui Wang (Suzhou, China) and Mengxuan Qian (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer st...