US Patent Issued to SUPER GROUP SEMICONDUCTOR on Jan. 13 for "Trench power semiconductor component and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,029, issued on Jan. 13, was assigned to SUPER GROUP SEMICONDUCTOR Co. LTD. (Hsinchu County, Taiwan).

"Trench power semiconductor component and method for manufacturing the same" was invented by Hsiu-Wen Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench power semiconductor component and a method for manufacturing the same are provided. The trench power semiconductor component includes an epitaxial layer having a trench, a bottom insulating layer, a gate insulating layer, a shielding electrode disposed in the trench, a gate, and a separation structure that includes a covering portion and a spacer portion. The gate is ...