US Patent Issued to SUNRISE MEMORY on Sept. 9 for "High capacity memory circuit with low effective latency" (California, Oregon, Washington Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,606, issued on Sept. 9, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"High capacity memory circuit with low effective latency" was invented by Youn Cheul Kim (Saratoga, Calif.), Richard S. Chernicoff (Mercer Island, Wash.), Khandker Nazrul Quader (Santa Clara, Calif.), Robert D. Norman (Pendleton, Ore.), Tianhong Yan (Saratoga, Calif.), Sayeef Salahuddin (Walnut Creek, Calif.) and Eli Harari (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first circuit formed on a first semiconductor substrate is wafer-bonded to a second circuit formed on a second memory circuit, wherein the first circuit includes quasi-volatile or no...