US Patent Issued to SUNRISE MEMORY on Nov. 4 for "Thin film storage transistor with silicon oxide nitride charge trapping layer" (Oregon Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,873, issued on Nov. 4, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Thin film storage transistor with silicon oxide nitride charge trapping layer" was invented by Scott Brad Herner (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film storage transistor includes a charge storage film provided between a channel region and a gate conductor where the charge storage film includes a tunneling dielectric layer formed adjacent the channel region and a charge trapping layer formed adjacent the tunneling dielectric layer. In some embodiments, the charge trapping layer is a layer including silicon, silicon oxide and silicon ni...