US Patent Issued to SUNRISE MEMORY on May 27 for "Three-dimensional memory structure fabricated using repeated active stack sections" (American, Japanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,565, issued on May 27, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Three-dimensional memory structure fabricated using repeated active stack sections" was invented by Shohei Kamisaka (Kanagawa, Japan), Vinod Purayath (Sedona, Ariz.) and Jie Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional memory structure above a semiconductor substrate includes forming two or more active stack sections, each formed on top of each other and separated by a dielectric buffer layer, where each active stack section includes multilayers separated by isolation dielectric layers and trenches with s...