US Patent Issued to SUNRISE MEMORY on March 18 for "Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array" (Oregon, California Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,547, issued on March 18, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array" was invented by Scott Brad Herner (Portland, Ore.), Christopher J. Petti (Mountain View, Calif.), George Samachisa (Atherton, Calif.) and Wu-Yi Henry Chien (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film storage transistor in a NOR memory string has a gate dielectric layer that includes a silicon oxide nitride (SiON) tunnel dielectric layer. In one embodiment, the SiON tunnel dielectric layer has a thickness between 0.5 to 5.0 nm t...