US Patent Issued to SUNRISE MEMORY on Jan. 27 for "Three-dimensional vertical nor flash thin film transistor strings" (California Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,057, issued on Jan. 27, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Three-dimensional vertical nor flash thin film transistor strings" was invented by Eli Harari (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure including a storage transistor having a data storage storage region, a gate terminal, a first drain or source terminal, and a second drain or source terminal, the storage transistor being configurable to have a threshold voltage that is representative of data stored in the data storage region; a word line electrically connected to the gate terminal, configured to provide a control voltage durin...