US Patent Issued to SUNRISE MEMORY on Jan. 20 for "Three-dimensional nor memory array of thin-film ferroelectric memory transistors implementing partial polarization" (American, Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,121, issued on Jan. 20, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Three-dimensional nor memory array of thin-film ferroelectric memory transistors implementing partial polarization" was invented by Eli Harari (Saratoga, Calif.), Masahiro Yoshihara (Yokohama, Japan) and Michael McCarthy (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure including three-dimensional NOR memory strings and method of operation is disclosed. In some embodiments, the memory device implements partial polarization to provide a reference signal for read operation. The reference signal realizes a third logical state distinguisha...