US Patent Issued to SUNLUNE (SINGAPORE) on Oct. 7 for "Dynamic random access memory refresh circuit and refresh method, and proof-of-work chip" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,795, issued on Oct. 7, was assigned to SUNLUNE (SINGAPORE) PTE. LTD. (Beijing).

"Dynamic random access memory refresh circuit and refresh method, and proof-of-work chip" was invented by Yusheng Zhang (Beijing) and Fuquan Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A DRAM refresh circuit and refresh method, and a proof-of-work chip. The DRAM refresh circuit comprises a row address recording unit, which is configured to record a row that has been accessed in a DRAM within the current refresh cycle; a refresh driving unit, which is configured to be called to perform a refresh operation; and a refresh control unit, which is configured to...