US Patent Issued to SUMITOMO HEAVY INDUSTRIES on March 18 for "Ion implanter, ion implantation method, and semiconductor device manufacturing method" (Japanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,039, issued on March 18, was assigned to SUMITOMO HEAVY INDUSTRIES LTD. (Tokyo).

"Ion implanter, ion implantation method, and semiconductor device manufacturing method" was invented by Sayumi Hirose (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and i...