US Patent Issued to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY on March 18 for "Ion implantation method and ion implanter" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,046, issued on March 18, was assigned to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY Co. LTD. (Tokyo).

"Ion implantation method and ion implanter" was invented by Yoji Kawasaki (Ehime, Japan) and Haruka Sasaki (Ehime, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam."...