US Patent Issued to Sumitomo Electric Industries on Sept. 30 for "Silicon carbide epitaxial substrate" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,428,752, issued on Sept. 30, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Silicon carbide epitaxial substrate" was invented by Hiroki Nishihara (Osaka, Japan), Takaya Miyase (Osaka, Japan) and Taro Nishiguchi (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide epitaxial substrate includes a silicon carbide substrate, a silicon carbide epitaxial film. The silicon carbide epitaxial film is on the silicon carbide substrate. The first extended defect is in the silicon carbide epitaxial film. The first extended defect includes a particle, a triangular defect extending from the particle along an off-direction,...