US Patent Issued to Sumitomo Electric Industries on Nov. 25 for "Transistor and semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,286, issued on Nov. 25, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Transistor and semiconductor device" was invented by Toru Hiyoshi (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner,...