US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on May 6 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,158, issued on May 6, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Silicon carbide semiconductor device" was invented by Yu Saitoh (Osaka, Japan) and Takeyoshi Masuda (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface. A gate trench is provided in the first main surface. The gate trench is defined by side surfaces and a bottom surface. The side surfaces penetrate the source region and the body region to reach the drift region. The bottom surface connects t...