ALEXANDRIA, Va., March 26 -- United States Patent no. 12,259,654, issued on March 25, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).
"Method for manufacturing semiconductor device" was invented by Tadashi Watanabe (Yokohama, Japan) and Takahide Hirasaki (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the secon...