ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,543, issued on March 11, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).
"Semiconductor device including plurality of gate fingers with various levels" was invented by Kenya Nishiguchi (Osaka, Japan) and Akihiro Hayasaka (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a channel layer provided on the substrate, a semiconductor layer provided on the channel layer, gate fingers and a gate connection wiring provided on the semiconductor layer, and an insulating film provided between the semiconductor layer and the gate fingers, wherein the gate fingers includes a first gate fin...