US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on June 24 for "Gallium arsenide single crystal and gallium arsenide single crystal substrate" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,546, issued on June 24, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Gallium arsenide single crystal and gallium arsenide single crystal substrate" was invented by Hidetoshi Takayama (Kobe, Japan) and Yukio Ishikawa (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium arsenide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of th...