ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,979, issued on July 8, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).
"High frequency device" was invented by Noriyoshi Suda (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high frequency device includes a semiconductor chip including a semiconductor substrate, and an amplifier provided on a front surface of the semiconductor substrate and amplifying a high frequency signal, a first reference potential layer provided above the semiconductor chip in an upper direction perpendicular to the front surface of the semiconductor substrate, and provided so as to overlap with the semiconductor chip in a plan view from above, ...