ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,058, issued on Jan. 13, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).
"Semiconductor device and method for manufacturing semiconductor device" was invented by Takahide Hirasaki (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes forming a first insulating layer on a first nitride semiconductor layer having a principal surface, forming a mask including a first mask opening on the first insulating layer, forming a first opening in the first insulating layer through the first mask opening, forming a second nitride semiconductor layer on the first nitride semiconduct...