US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on Feb. 3 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,342, issued on Feb. 3, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Silicon carbide semiconductor device" was invented by Kosuke Uchida (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes a drift region being a first-conductivity type, a body region being a second-conductivity type and provided on the drift region, a source region being the first-conductivity type and provided on the body region such that the source re...