ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,341, issued on Aug. 26, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).
"Method for manufacturing semiconductor device" was invented by Yukihiro Tsuji (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device, includes forming source and drain electrodes on a semiconductor layer provided above a substrate; forming a first insulating film covering a surface of the semiconductor layer, between the source and drain electrodes, forming a second insulating film on the first insulating film, forming a mask on the second insulating film, the mask having an opening between the source and...