US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on Aug. 19 for "Method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,231, issued on Aug. 19, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Method of manufacturing semiconductor device" was invented by Daiki Takayama (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a protective film above an electron transport layer. The method includes forming a zinc oxide film on the protective film by a sol-gel method. The method includes forming a sacrificial film on the zinc oxide film. The method includes forming a first opening and a second opening that are each in the sacrificial film, the zinc oxide film, the protective film, an...