ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,083, issued on April 8, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).
"Semiconductor device" was invented by Shigeki Yoshida (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor layer provided on the substrate and having a plurality of GaN channel layers and a plurality of AlGaN barrier layers which are alternately laminated from a substrate side, a source electrode and a drain electrode electrically connected to the GaN channel layers, and a gate electrode provided between the source electrode and the drain electrode to control a potential of the semiconductor ...