ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,770, issued on Nov. 25, was assigned to SUMITOMO ELECTRIC DEVICE INNOVATIONS INC. (Kanagawa, Japan).

"Semiconductor device and method of making semiconductor device" was invented by Yuya Tsutsumi (Kanagawa, Japan) and Masaomi Emori (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer covering the second main surface and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first conduc...