US Patent Issued to SUMITOMO ELECTRIC DEVICE INNOVATIONS on March 4 for "Semiconductor device having nickel oxide film on gate electrode" (Japanese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,927, issued on March 4, was assigned to SUMITOMO ELECTRIC DEVICE INNOVATIONS INC. (Kanagawa, Japan).

"Semiconductor device having nickel oxide film on gate electrode" was invented by Tomohiro Yoshida (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device includes a semiconductor layer, an insulating film provided on the semiconductor layer and having an opening formed therein, a gate electrode connected to the semiconductor layer through opening, a protection film covering gate electrode, and a Ni oxide film, wherein the insulating film has a first surface on the semiconductor layer side and a second surface opposite to...