US Patent Issued to Sumitomo Chemical on Oct. 7 for "Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,441, issued on Oct. 7, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo).

"Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure" was invented by Takehiro Yoshida (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A step of preparing a base substrate of a single crystal of a group III nitride semiconductor; a growth inhibition layer forming step of performing in situ formation of a growth inhibition layer over the entire main surface of the base substrate in a vapor phase growth apparatus; a first step of growing a first layer by epitaxially growing a single crystal of a group I...