US Patent Issued to SUMCO on Sept. 9 for "Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,388, issued on Sept. 9, was assigned to SUMCO Corp. (Tokyo).

"Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device" was invented by Ryo Hirose (Tokyo) and Takeshi Kadono (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing an epitaxial silicon wafer includes irradiating a surface of a silicon wafer with a beam of cluster ions containing SiHx ions (at least one of the integers 1 to 3 is selected as x of the SiHx ions) and C2Hy ions (at least one of the integers 2 to 5 is selected as y of the C2Hy ions) to form a modified layer that is located in a surface layer portion of the silico...