US Patent Issued to SUMCO on May 13 for "Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,560, issued on May 13, was assigned to SUMCO Corp. (Tokyo).

"Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter" was invented by Takashi Izeki (Nagasaki, Japan) and Yasuhito Narushima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A monocrystalline silicon includes a shoulder, a straight body, and a tail. The straight body includes: a first straight body having a first diameter d1; and a second straight body provided closer to the shoulder than the first straight body is and havin...