US Patent Issued to SUMCO on March 25 for "Method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during pulling of a silicon single crystal by the Czochralski process" (Japanese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,258,675, issued on March 25, was assigned to SUMCO Corp. (Tokyo).

"Method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during pulling of a silicon single crystal by the Czochralski process" was invented by Ryota Suewaka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a point detect simulator which makes it possible to determine the distribution of point defects in a silicon single crystal in consideration of the thermal stress of the silicon single crystal being grown. A point defect simulator 1 is a point defect simulator calculating the concentration profiles of va...