US Patent Issued to SUMCO on March 25 for "Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system" (Japanese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,065, issued on March 25, was assigned to SUMCO Corp. (Tokyo).

"Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system" was invented by Naoyuki Wada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epita...