ALEXANDRIA, Va., July 9 -- United States Patent no. 12,351,937, issued on July 8, was assigned to SUMCO Corp. (Tokyo).
"Production method for silicon monocrystal" was invented by Shogo Kobayashi (Tokyo), Norihito Fukatsu (Tokyo), Takahiro Kanehara (Tokyo) and Hitomi Yamamoto (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a manufacturing method of a silicon single crystal according to the present invention includes a melting process for generating a silicon melt containing a primary dopant, and a crystal pulling-up process that pulls up a silicon single crystal from the silicon melt. The crystal pulling-up process includes at least one additional doping process for adding a dopant raw mater...