ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,105, issued on April 15, was assigned to SUMCO Corp. (Tokyo).
"Method for producing epitaxial silicon wafer" was invented by Motoki Goto (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing an epitaxial silicon wafer, including: loading a wafer into a chamber; performing epitaxial growth; unloading the epitaxial silicon wafer from the chamber; and then cleaning the inside of the chamber using hydrochloric gas. After the cleaning is performed, whether components provided in the chamber are to be replaced or not is determined based on the cumulative amount of the hydrochloric gas supplied. The components have a base material that...