US Patent Issued to STMICROELECTRONICS on Sept. 30 for "High dose implantation for ultrathin semiconductor-on-insulator substrates" (French Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,987, issued on Sept. 30, was assigned to STMICROELECTRONICS INC. (Coppell, Texas).

"High dose implantation for ultrathin semiconductor-on-insulator substrates" was invented by Jocelyne Gimbert (Crolles, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane str...