US Patent Issued to STMICROELECTRONICS on Sept. 23 for "Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device" (Italian Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,285, issued on Sept. 23, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device" was invented by Filippo Giannazzo (Catania, Italy), Giuseppe Greco (Misterbianco, Italy), Fabrizio Roccaforte (Mascalucia, Italy) and Simone Rascuna' (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conducti...