US Patent Issued to STMicroelectronics on Oct. 28 for "Normally-off transistor with reduced on-state resistance and manufacturing method" (Italian Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,765, issued on Oct. 28, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Normally-off transistor with reduced on-state resistance and manufacturing method" was invented by Ferdinando Iucolano (Gravina di Catania, Italy) and Alfonso Patti (Tremestieri Etneo, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A normally-off electronic device, comprising: a semiconductor body including a heterostructure that extends over a buffer layer; a recessed-gate electrode, extending in a direction orthogonal to the plane; a first working electrode and a second working electrode at respective sides of the gate electrode; and an active area ho...