US Patent Issued to STMicroelectronics on Nov. 4 for "Integrated circuit chip including a passivation nitride layer in contact with a high voltage bonding pad and method of making" (Italian Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,163, issued on Nov. 4, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Integrated circuit chip including a passivation nitride layer in contact with a high voltage bonding pad and method of making" was invented by Simone Dario Mariani (Vedano al Lambro, Italy), Elisabetta Pizzi (Milan) and Daria Doria (Como, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer...